Robust structure for HVPW Schottky diode
US7808069B2 · kind B2 · utility
9Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Apr 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A high-voltage Schottky diode including a deep P-well having a first width is formed on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.