Semiconductor device with improved high current performance
US7808088B2 · kind B2 · utility
1Cited by
21References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jul 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a die having a first surface and a second surface, a first leadframe connected to the first surface and the second surface, and a second leadframe connected to the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.