Method and apparatus for evaluating the effects of stress on an RF oscillator
US7808266B2 · kind B2 · utility
7Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2009 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jan 13, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2824
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Apparatus and methods are disclosed for evaluating degradation of a transistor in a cross coupled pair of an RF oscillator independently. A MOS device can be coupled between a separated center-tap inductor. By appropriately sizing the MOS device and turning the MOS device on during operation of RF oscillator, a good contact can again be made that allows the oscillator to operate at design performance. By turning the MOS device off, the supplies can be separates such that I-V characteristics of both transistors of the cross-coupled pair may be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.