RFID tag with redundant non-volatile memory cell
US7808823B2 · kind B2 · utility
11Cited by
146References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) of a Radio Frequency Identification (RFID) tag such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configuration, a single-ended device, a differential device, a simple logic circuit function, and/or a complex logic circuit function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.