Patent · US Active

Method and device for bonding wafers

US7811898B2 · kind B2 · utility

2Cited by
6References
13Claims
0Family size

Inventor

Key dates

Filing dateOct 10, 2006
Grant dateOct 12, 2010
Priority date
Expiry dateSep 14, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/187
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a method and a device (1) for bonding wafers (6, 9). Here at least one wafer surface is first wetted with a molecular dipolar compound, whereupon the wafers are brought into contact with each other. The bonding of the wafers then takes place by means of microwave irradiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.