Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture
US7811908B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Mar 25, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the <1 100> direction, and from 0° to 1° in the <11 20> direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.