Hideyuki Ijiri
13Patents
2h-index
20Co-inventors
50Inventor score
Filing activity: Dec 7, 2001 → Sep 26, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7589000B2 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Chemistry; Metallurgy | 12 | Active |
| US6987917B2 | Optical fiber preform producing method, optical fiber preform, and optical fiber | Physics | 2 | Expired |
| US9806494B2 | Optical module and method for manufacturing the optical module | Electricity | 2 | Active |
| US7858502B2 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Chemistry; Metallurgy | 2 | Active |
| US8404569B2 | Fabrication method and fabrication apparatus of group III nitride crystal substance | Chemistry; Metallurgy | 1 | Active |
| US7062941B2 | Manufacturing method of optical fiber preform | Chemistry; Metallurgy | 0 | Expired |
| US8227826B2 | Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture | Chemistry; Metallurgy | 0 | Active |
| US10333270B2 | Optical module and method for manufacturing the optical module | Electricity | 0 | Active |
| US8476158B2 | Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture | Electricity | 0 | Active |
| US10024516B2 | Optical module | Electricity | 0 | Active |
| US10199795B2 | Optical module and method for manufacturing the optical module | General | 0 | Revoked |
| US7811908B2 | Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture | Chemistry; Metallurgy | 0 | Active |
| US8772787B2 | Prepared and stored GaN substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.