Device and method for etching a substrate using an inductively coupled plasma
US7811941B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Aug 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and a device suitable for implementing this method for etching a substrate (10), a silicon body in particular, using an inductively coupled plasma (14) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (13), the alternating field generating an inductively coupled plasma (14) of reactive particles in a reactor (15). The inductively coupled plasma (14) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma (14) via the radio-frequency electromagnetic alternating field with the ICP source (13) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma (14) as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.