Multijunction photovoltaic cell grown on high-miscut-angle substrate
US7812249B2 · kind B2 · utility
39Cited by
4References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 14, 2003 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Jun 10, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention provides a photovoltaic cell comprising a GaInP subcell comprising a disordered group-III sublattice, a Ga(In)As subcell disposed below the GaInP subcell, and a Ge substrate disposed below the Ga(In)As subcell comprising a surface misoriented from a (100) plane by an angle from about 8 degrees to about 40 degrees toward a nearest (111) plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.