MOSFET devices and methods for making them
US7812413B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Sep 18, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Sep 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.