Inventor · New York, NY, US

Lars-Ake Ragnarsson

20Patents
7h-index
46Co-inventors
69Inventor score

Filing activity: Jan 8, 2001 → May 9, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7579285B2 Atomic layer deposition method for depositing a layer Electricity 447 Active
US9287273B2 Method for manufacturing a semiconductor device comprising transistors each having a different effective work function Electricity 400 Active
US6852575B2 Method of forming lattice-matched structure on silicon and structure formed thereby Electricity 35 Expired
US6831339B2 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same Electricity 13 Expired
US7432550B2 Semiconductor structure including mixed rare earth oxide formed on silicon Electricity 9 Expired
US7923743B2 Semiconductor structure including mixed rare earth oxide formed on silicon Electricity 7 Active
US6891231B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier Electricity 7 Expired
US10607896B2 Method of forming gate of semiconductor device and semiconductor device having same Electricity 4 Active
US7648864B2 Semiconductor structure including mixed rare earth oxide formed on silicon Electricity 3 Active
US7169674B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier Electricity 3 Expired
US9245759B2 Method for manufacturing a dual work function semiconductor device Electricity 3 Active
US9892923B2 Method for tuning the effective work function of a metal Electricity 1 Active
US11367662B2 Semiconductor devices and methods of forming the same Electricity 1 Active
US10424517B2 Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereof Electricity 1 Active
US8211812B2 Method for fabricating a high-K dielectric layer Electricity 0 Active
US7812413B2 MOSFET devices and methods for making them Electricity 0 Active
US7488640B2 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same Electricity 0 Expired
US11837652B2 Semiconductor processing system with in-situ electrical bias and methods thereof Electricity 0 Active
US11335792B2 Semiconductor processing system with in-situ electrical bias and methods thereof Electricity 0 Active
US11894240B2 Semiconductor processing systems with in-situ electrical bias Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.