MEMS device using NiMn alloy and method of manufacture
US7812703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Aug 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2061/006
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A material for forming a conductive structure for a MEMS device is described, which is an alloy containing about 0.01% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower than the sheet resistance of the pure metal. In addition, the alloy may have superior creep and higher recrystallization temperature than the pure metal. It is hypothesized that these advantageous material properties are a result of the larger grain structure existing in the NiMn alloy film compared to the pure nickel metal film. These properties may make the alloy appropriate for applications such as MEMS thermal electrical switches for telecommunications applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.