Program and erase methods for nonvolatile memory
US7813183B2 · kind B2 · utility
3Cited by
10References
25Claims
0Family size
Assignee
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Key dates
| Filing date | May 12, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Dec 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.