Inventor · Hwaseong-si, KR

Jungdal Choi

34Patents
9h-index
43Co-inventors
67Inventor score

Filing activity: May 12, 2008 → May 26, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US9111617B2 Three-dimensional semiconductor memory device Electricity 14 Active
US9059395B2 Resistive random access memory devices having variable resistance layers and related methods Electricity 14 Active
US8873294B2 Nonvolatile memory devices, erasing methods thereof and memory systems including the same Physics 13 Active
US8822971B2 Semiconductor memory device having three-dimensionally arranged resistive memory cells Electricity 11 Active
US8107295B2 Nonvolatile memory device and read method thereof Physics 11 Active
US8822322B2 Semiconductor devices and methods of fabricating the same Electricity 11 Active
US8638611B2 Vertical nonvolatile memory devices and methods of operating same Physics 10 Active
US8754466B2 Three-dimensional semiconductor memory devices Electricity 10 Active
US8767465B2 Nonvolatile memory device and method of manufacturing the same Electricity 9 Active
US8587052B2 Semiconductor devices and methods of fabricating the same Electricity 8 Active
US8625357B2 Local self-boosting method of flash memory device and program method using the same Physics 7 Active
US8059466B2 Memory system and programming method thereof Physics 7 Active
US8737129B2 Nonvolatile memory device and read method thereof Physics 6 Active
US8735860B2 Variable resistance memory device and method of fabricating the same Electricity 5 Active
US9559112B2 Semiconductor devices and methods of fabricating the same Electricity 5 Active
US9514807B2 Variable resistance memory device Electricity 5 Active
US8295097B2 Channel precharge and program methods of a nonvolatile memory device Physics 4 Active
US9564237B2 Nonvolatile memory device and read method thereof Physics 4 Active
US9379244B2 Semiconductor device having fin-type field effect transistor and method of manufacturing the same Electricity 4 Active
US9224493B2 Nonvolatile memory device and read method thereof Physics 3 Active
US8064259B2 Nonvolatile NAND-type memory devices including charge storage layers connected to insulating layers Physics 3 Active
US7813183B2 Program and erase methods for nonvolatile memory Physics 3 Active
US8446773B2 Memory system and programming method thereof Physics 3 Active
US8462558B2 Program and erase methods for nonvolatile memory Physics 2 Active
US9036398B2 Vertical resistance memory device and a read method thereof Physics 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.