Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
US7813202B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | May 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film magnetic device comprises, on a substrate, a composite assembly deposited by cathode sputtering and consists of a first layer made of a ferromagnetic material with a high rate of spin polarization, the magnetization of which is in plane in the absence of any electric or magnetic interaction, a second layer made of a magnetic material with high perpendicular anisotropy, the magnetization of which is outside the plane of said layer in the absence of any electric or magnetic interaction, and coupling of which with said first layer induces a decrease in the effective demagnetizing field of the entire device, a third layer that is in contact with the first layer via its interface opposite to that which is common to the second layer and made of a material that is not magnetic and not polarizing for electrons passing through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.