Transistor laser devices and methods
US7813396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2009 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Apr 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.