Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
US7815733B2 · kind B2 · utility
3Cited by
21References
16Claims
0Family size
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Key dates
| Filing date | Aug 13, 2007 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Aug 5, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B9/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.