Yusuke Mori
14Patents
8Active
14Granted
43Portfolio score
Filing activity: Mar 18, 2004 → Dec 9, 2011 · 7 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7176115B2 | Method of manufacturing Group III nitride substrate and semiconductor device | Electricity | 17 | Expired |
| US7905958B2 | Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device | Electricity | 8 | Active |
| US7435295B2 | Method for producing compound single crystal and production apparatus for use therein | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7309534B2 | Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same | Electricity | 6 | Expired |
| US7381268B2 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7815733B2 | Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal | Chemistry; Metallurgy | 3 | Active |
| US7255742B2 | Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device | Chemistry; Metallurgy | 2 | Expired |
| US7754012B2 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride | Emerging Cross-Sectional Technologies | 2 | Active |
| US8568532B2 | Method for growing single crystal of group III metal nitride and reaction vessel for use in same | Emerging Cross-Sectional Technologies | 2 | Active |
| US8016940B2 | Processing method for organic crystal, processing device for organic crystal, and observing device for organic crystal | Performing Operations; Transporting | 1 | Active |
| US7288151B2 | Method of manufacturing group-III nitride crystal | Chemistry; Metallurgy | 1 | Expired |
| US8038794B2 | Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device | Electricity | 0 | Active |
| US7708833B2 | Crystal growing apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US7794539B2 | Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.