Electro-chemical mechanical planarization pad with uniform polish performance
US7815778B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Aug 19, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/20
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.