Patent · US Active

Copper electrodeposition in microelectronics

US7815786B2 · kind B2 · utility

5Cited by

33References

19Claims

0Family size

Assignee

Enthone GmbH · US

Inventors

Vincent Paneccasio, Jr. · Madison, US
Xuan Lin · Northford, US
Paul Figura · Orange, US
Richard Hurtubise · Clinton, US

Key dates

Filing date	Aug 28, 2007
Grant date	Oct 19, 2010
Priority date	—
Expiry date	Dec 8, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76877
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.