Light emitting diode package and fabrication method thereof
US7816156B2 · kind B2 · utility
12Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jan 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8582
Abstract
The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.