Method of forming a device by removing a conductive layer of a wafer
US7816165B2 · kind B2 · utility
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12References
13Claims
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Key dates
| Filing date | Jan 9, 2009 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jan 9, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0315
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a MEMS device provides a wafer having a base with a conductive portion. The wafer also has an intermediate conductive layer. After it provides the wafer, the method adds a diaphragm layer to the wafer. The method removes at least a portion of the intermediate conductive layer to form a cavity between the diaphragm layer and the base. At least a portion of the diaphragm layer is movable relative to the base. After it forms the cavity, the method seals the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.