Patent · US Active

Dual-pixel full color CMOS imager with large capacity well

US7816170B2 · kind B2 · utility

1Cited by

0References

15Claims

0Family size

Assignee

Sharp Laboratories of America, Inc. · US

Inventors

Jong-Jan Lee · Camas, US
Jon M. Speigle · Vancouver, US
Douglas J. Tweet · Camas, US

Key dates

Filing date	Oct 14, 2008
Grant date	Oct 19, 2010
Priority date	—
Expiry date	Oct 30, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/802
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. A single photodiode including a bottom p doped layer overlies the substrate at a third depth. The third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.