Device structures including backside contacts, and methods for forming same
US7816231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to device structures having backside contacts that extend from a back surface of a substrate through the substrate to electrically contact frontside semiconductor devices. The substrate preferably further includes one or more alignment structures located therein, each of which is sufficiently visible at the back surface of the substrate. In this manner, backside lithographic alignment can be carried out using such alignment structures to form at least one back contact opening in a patterned resist layer over the back surface of the substrate. The formed back contact opening is lithographically aligned with the front semiconductor device and can be etched to form a back contact via that extends from the back surface of the substrate onto the front semiconductor device. Filling of the back contact via with a conductive material results in a conductive back contact that electrically contacts the front semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.