Semiconductor device and method of manufacturing the same
US7816242B2 · kind B2 · utility
4Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 21, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Oct 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device includes a plate of semiconductor layer, an insulator layer formed on the plate of semiconductor layer and brought into contact with the plate of semiconductor layer by at least two adjacent faces, a thickness of the insulator layer in the vicinity of a boundary line between the two adjacent faces being larger than that of the insulator layer in a region other than the vicinity of the boundary line, and a band of conductor layer formed facing a middle portion of the plate-like semiconductor layer via the insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.