Copper diffusion barrier
US7816266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2007 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | May 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method of forming a copper portion surrounded by an insulating material in an integrated circuit structure, the insulating material being a first oxide, the method having steps including forming a composite material over a region of the insulating material where the copper portion is to be formed, the composite material having first and second materials, annealing such that the second material reacts with the insulating material to form a second oxide that provides a diffusion barrier to copper; and depositing a copper layer over the composite material by electrochemical deposition to form the copper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.