Method of depositing a higher permittivity dielectric film
US7816283B2 · kind B2 · utility
1Cited by
10References
11Claims
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Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jun 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (AxNy) on the silicon layer, wherein the specific element (A) and nitrogen (N) in the nitride film (AxNy) have a predetermined fraction relationship between x and y; a second step of oxidizing the nitride film in a oxygen atmosphere to form the dielectric film (AON).
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