Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
US7816284B2 · kind B2 · utility
1Cited by
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5Claims
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Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.