Jong In Yang
24Patents
5h-index
30Co-inventors
65Inventor score
Filing activity: Jul 25, 2006 → May 8, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8735932B2 | Light-emitting device including a connection layer formed on a side surface thereof | Electricity | 72 | Active |
| US9099631B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 49 | Active |
| US9293675B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 28 | Active |
| US7838315B2 | Method of manufacturing vertical light emitting diode | Electricity | 14 | Active |
| US8975655B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 5 | Active |
| US8872205B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 5 | Active |
| US9324904B2 | Semiconductor light emitting device and light emitting apparatus | Electricity | 3 | Active |
| US8901586B2 | Light emitting device and method of manufacturing the same | Electricity | 2 | Active |
| US9660163B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 2 | Active |
| US8334156B2 | Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same | Electricity | 2 | Active |
| US8110424B2 | Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor | Electricity | 2 | Active |
| US10038127B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 2 | Active |
| US9362718B2 | Semiconductor light emitting device | Electricity | 1 | Active |
| US9099629B2 | Semiconductor light emitting device and light emitting apparatus | Electricity | 1 | Active |
| US8932891B2 | Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device | Electricity | 1 | Active |
| US8110417B2 | Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device | Electricity | 1 | Active |
| US9166109B2 | Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure | Electricity | 1 | Active |
| US7816284B2 | Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device | Electricity | 1 | Active |
| US7859086B2 | Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same | Electricity | 0 | Active |
| US8476639B2 | Group III nitride semiconductor and group III nitride semiconductor structure | Electricity | 0 | Active |
| US8829548B2 | Light emitting device package and fabrication method thereof | Electricity | 0 | Active |
| US8877562B2 | Method of manufacturing light-emitting device | Electricity | 0 | Active |
| US10930817B2 | Light-emitting device | Electricity | 0 | Active |
| US10978614B2 | Light-emitting device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.