SiC semiconductor having junction barrier schottky device
US7816733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Oct 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/111
Abstract
A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.