Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package
US7816785B2 · kind B2 · utility
41Cited by
26References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 22, 2009 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved thermal interface material for semiconductor devices is provided. More particularly, low compressive force, non-silicone, high thermal conductivity formulations for thermal interface material is provided. The thermal interface material comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 5.5 W/mK or greater and a compressed bond-line thickness of approximately 100 microns or less using a compressive force of approximately 100 psi or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.