Alignment mark and defect inspection method
US7817265B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Mar 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A defect inspection method is disclosed. A first type defect inspection system is used to perform a first defect inspection by aligning to an alignment mark on a wafer as a reference point for the first defect inspection. A fabrication process is performed on the wafer thereafter, and a second defect inspection is performed by using a second type defect inspection system to align the alignment mark on the wafer as the reference point for the second defect inspection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.