Patent · US Active

Insulated gate bipolar transistor fault protection system

US7817392B2 · kind B2 · utility

3Cited by
8References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2007
Grant dateOct 19, 2010
Priority date
Expiry dateJul 30, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K2217/0027
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.