Method for growing silicon single crystal and method for manufacturing silicon wafer
US7819972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Aug 5, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.