Method to fabricate a tilted logpile photonic crystal
US7820365B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180° about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.