Schottky diode and method of manufacture
US7820473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.