Cleave initiation using varying ion implant dose
US7820527B2 · kind B2 · utility
2Cited by
21References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | May 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.