Semiconductor device and method of producing the semiconductor device
US7820558B2 · kind B2 · utility
3Cited by
7References
25Claims
0Family size
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Key dates
| Filing date | Jun 21, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Mar 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.