Semiconductor device and manufacturing method thereof with a recessed backside substrate for breakdown voltage blocking
US7821014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof uses a semiconductor substrate of silicon carbide. On one principal surface side of the substrate, at its central section, a layer of silicon carbide or gallium nitride as a semiconductor layer having the thickness at least necessary for breakdown voltage blocking is epitaxially grown or formed from part of the substrate. A recess is formed in the other principal surface side of substrate at a position facing the central section. A supporting section surrounds the bottom of the recess and provides the side face of the recess. The recess is formed by processing such as dry etching. The semiconductor device, even though the semiconductor substrate is made thinner for the realization of small on-resistance, can maintain the strength of the semiconductor substrate capable of reducing occurrence of a wafer cracking during the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.