Light activated silicon controlled switch
US7821016B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 2, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Nov 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.