Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels
US7821046B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.