Lateral MISFET and method for fabricating it

US7821064B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Michael Rueb · Faak am See, AT
• Markus Schmitt · Neubiberg, DE
• Carolin Tolksdorf · Ebersberg, DE
• Uwe Wahl · Munich, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Mar 14, 2006
• Grant date: Oct 26, 2010
• Expiry date: Mar 14, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.