Inventor · Friedberg, DE

Armin Willmeroth

118Patents
10h-index
65Co-inventors
83Inventor score

Filing activity: Apr 19, 2001 → Mar 8, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8569842B2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Electricity 73 Active
US6861723B2 Schottky diode having overcurrent protection and low reverse current Electricity 58 Expired
US8970262B2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Electricity 27 Active
US6639272B2 Charge compensation semiconductor configuration Electricity 25 Expired
US6838729B2 Semiconductor component with enhanced avalanche ruggedness Electricity 20 Expired
US7459365B2 Method for fabricating a semiconductor component Electricity 19 Active
US6914297B2 Configuration for generating a voltage sense signal in a power semiconductor component Electricity 17 Expired
US7112868B2 IGBT with monolithic integrated antiparallel diode Electricity 16 Expired
US7777278B2 Lateral semiconductor component with a drift zone having at least one field electrode Electricity 14 Active
US6667514B2 Semiconductor component with a charge compensation structure and associated fabrication Electricity 11 Expired
US9024383B2 Semiconductor device with a super junction structure with one, two or more pairs of compensation layers Electricity 10 Active
US8866253B2 Semiconductor arrangement with active drift zone Electricity 10 Active
US7709891B2 Component arrangement including a power semiconductor component having a drift control zone Electricity 10 Active
US9281392B2 Charge compensation structure and manufacturing therefor Electricity 9 Active
US6940126B2 Field-effect-controllable semiconductor component and method for producing the semiconductor component Electricity 9 Expired
US9306064B2 Semiconductor device and integrated apparatus comprising the same Emerging Cross-Sectional Technologies 8 Active
US7821033B2 Semiconductor component comprising a drift zone and a drift control zone Electricity 7 Active
US7332788B2 Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it Electricity 7 Expired
US7973362B2 Semiconductor component and method for producing it Electricity 7 Active
US8461648B2 Semiconductor component with a drift region and a drift control region Electricity 7 Active
US8344415B2 Semiconductor component Electricity 6 Active
US7825467B2 Semiconductor component having a drift zone and a drift control zone Electricity 5 Active
US6812524B2 Field effect controlled semiconductor component Electricity 5 Expired
US9070580B2 Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient Electricity 5 Active
US7936010B2 Power semiconductor having a lightly doped drift and buffer layer Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.