Semiconductor device and method for manufacturing the same
US7821071B2 · kind B2 · utility
5Cited by
66References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.