Spin transfer magnetic element having low saturation magnetization free layers
US7821087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Mar 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.