Method of forming a Schottky diode and structure therefor
US7821095B2 · kind B2 · utility
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11References
10Claims
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Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/115
Abstract
In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.