Semiconductor memory device, method of driving the same and method of manufacturing the same
US7821823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.