Hiroshi Sunamura
30Patents
5h-index
23Co-inventors
65Inventor score
Filing activity: Apr 25, 2003 → Aug 31, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7116573B2 | Switching element method of driving switching element rewritable logic integrated circuit and memory | Physics | 31 | Expired |
| US9331071B2 | Semiconductor device and manufacturing method thereof | Electricity | 7 | Active |
| US7750332B2 | Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device | Electricity | 7 | Expired |
| US7989924B2 | Switching element, programmable logic integrated circuit and memory element | Electricity | 7 | Active |
| US7586215B2 | ID tag | Physics | 5 | Expired |
| US7880215B2 | Nonvolatile semiconductor storage unit and production method therefor | Physics | 4 | Active |
| US8283732B2 | Semiconductor device | Electricity | 3 | Active |
| USRE42040E1 | Switching element method of driving switching element rewritable logic integrated circuit and memory | General | 3 | Expired |
| US9577062B2 | Dual metal gate electrode for reducing threshold voltage | Electricity | 2 | Active |
| US9680031B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US8362456B2 | Resistance change element and semiconductor device including the same | Electricity | 1 | Active |
| US8258589B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US8203133B2 | Switching element, reconfigurable logic integrated circuit and memory element | Electricity | 1 | Active |
| US10056405B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US7804085B2 | Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit | Electricity | 1 | Active |
| US9000540B2 | Semiconductor device and a method for manufacturing a semiconductor device | Electricity | 1 | Active |
| US9190475B2 | Semiconductor device and semiconductor device manufacturing method | Electricity | 1 | Active |
| US8003969B2 | Switching device, drive and manufacturing method for the same, integrated circuit device and memory device | Electricity | 0 | Active |
| US8372709B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9153588B2 | Semiconductor device and a method for manufacturing a semiconductor device | Electricity | 0 | Active |
| US9368403B2 | Method for manufacturing a semiconductor device | Electricity | 0 | Active |
| US7821823B2 | Semiconductor memory device, method of driving the same and method of manufacturing the same | Electricity | 0 | Active |
| US9082643B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US9166057B2 | Semiconductor device having the bottom gate type transistor formed in a wiring layer | Electricity | 0 | Active |
| US9496403B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.