Patent · US Active

Semiconductor layer structure with superlattice

US7822089B2 · kind B2 · utility

4Cited by

25References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christoph Eichler · Donaustauf, DE
Alfred Lell · Maxhütte-Haidhof, DE

Key dates

Filing date	Jul 20, 2007
Grant date	Oct 26, 2010
Priority date	—
Expiry date	Feb 19, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8215
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.