Method of growing oxide thin films
US7824492B2 · kind B2 · utility
523Cited by
31References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.